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ST 2SB1424U
PNP Silicon Epitaxial Planar Transistor
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current - DC Collector Current - Pulse 1) Total Power Dissipation Junction Temperature Storage Temperature Range
1)
Symbol -VCBO -VCEO -VEBO -IC -ICP Ptot TJ TS
Value 20 20 6 3 5 0.5 150 - 55 to + 150
Unit V V V A A W
O
C C
O
Single pulse, PW = 10 ms.
Characteristics at Ta = 25 OC
Parameter DC Current Gain at -VCE = 2 V, -IC = 100 mA Collector Base Breakdown Voltage at -IC = 50 A Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 50 A Collector Cutoff Current
at -VCB = 20 V
Symbol Current Gain Group Q R hFE hFE -V(BR)CBO -V(BR)CEO -V(BR)EBO -ICBO -IEBO -VCE(sat) fT Cob
Min. 120 180 20 20 6 -
Typ. 240 35
Max. 270 390 0.1 0.1 0.5 -
Unit V V V A A V MHz pF
Emitter Cutoff Current at -VEB = 5 V Collector Emitter Saturation Voltage at -IC = 2 A, -IB = 100 mA Transition Frequency at -VCE = 2 V, -IE = 0.5 A, f = 100 MHz Output Capacitance at -VCB = 10 V, f = 1 MHz
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/12/2006
ST 2SB1424U
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/12/2006
ST 2SB1424U
SOT-89 PACKAGE OUTLINE
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 15/12/2006

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